Datasheet

Vishay Siliconix
Si4848DY
Document Number: 71356
S09-0870-Rev. C, 18-May-09
www.vishay.com
1
N-Channel 150-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
150
0.085 at V
GS
= 10 V
3.7
0.095 at V
GS
= 6.0 V
3.5
SO-8
D
D
D
D
S
S
S
G
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4848DY-T1-E3 (Lead (Pb)-free)
Si4848DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
3.7 2.7
A
T
A
= 70 °C
3.0 2.1
Pulsed Drain Current
I
DM
25
Avalanche Current L = 0.1 mH
I
AS
10
Continuous Source Current (Diode Conduction)
a
I
S
2.5 1.3
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.0 1.5
W
T
A
= 70 °C
1.9 1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
35 42
°C/W
Steady State 68 82
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
18 23