Datasheet

Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
www.vishay.com
3
Vishay Siliconix
Si4840BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
0 0.4 0.8 1.2 1.6 2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
- Drain Current (A)I
D
3 V
2 V
0.004
0.006
0.008
0.010
0.012
0 1020304050
I
D
- Drain Current (A)
- On-Resistance (Ω)
R
DS(on)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 5 10 15 20 25 30 35
V
DS
= 20 V
I
D
= 12.4 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
V
GS
- Gate-to-Source Voltage (V)
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
- Drain Current (A)I
D
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
0
400
800
1200
1600
2000
2400
0 5 10 15 20 25 30 35 40
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 12.4 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)