Datasheet

Vishay Siliconix
Si4840BDY
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
www.vishay.com
1
N-Channel 40-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Synchronous Rectification
• POL, IBC
- Secondary Side
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
d
Q
g
(Typ.)
40
0.009 at V
GS
= 10 V
19
15 nC
0.012 at V
GS
= 4.5 V
16
D
S
D
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4840BDY-T1-E3 (Lead (Pb)-free)
Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
S
N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
C
= 25 °C.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
19
A
T
C
= 70 °C
15
T
A
= 25 °C
12.4
a, b
T
A
= 70 °C
9.9
a, b
Pulsed Drain Current I
DM
50
Avalanche Current
L = 0.1 mH
I
AS
15
Avalanche Energy E
AS
11
mJ
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
5
A
T
A
= 25 °C
2.1
a, b
Maximum Power Dissipation
T
C
= 25 °C
P
D
6
W
T
C
= 70 °C
3.8
T
A
= 25 °C
2.5
a, b
T
A
= 70 °C
1.6
a, b
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t ≤ 10 s
R
thJA
37 50
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
17 21