Datasheet

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Document Number: 73038
S-83039-Rev. D, 29-Dec-08
Vishay Siliconix
Si4812BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
T
J
= 25 °C
50
1
0.1
10
125 150
0.00001
1
10
T
J
- Junction Temperature (°C)
- Reverse Current (mA)I
R
0 255075100
10 V
0.001
0.01
0.1
20 V
30 V
0.0001
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (MOSFET)
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.00
0.01
0.02
0.03
0.04
0.05
0246810
I
D
= 9.5 A
0
10
20
30
40
50
Power (W)
Time (s)
6001001010.10.01
Safe Operating Area, Junction-to-Case
100
1
0.1 1 10 100
0.01
10
1 ms
0.1
Limited by
R
DS(on)*
T
C
= 25 °C
Single Pulse
10 ms
100 ms
DC
10 s
1 s
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D