Datasheet

Document Number: 73038
S-83039-Rev. D, 29-Dec-08
www.vishay.com
3
Vishay Siliconix
Si4812BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
10
20
30
40
50
012345
V
GS
= 10 thru 4 V
3 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0 102030405060
V
GS
= 10 V
V
GS
= 4.5 V
0
1
2
3
4
5
6
0246810
V
DS
= 15 V
I
D
= 9.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= 125 °C
- 55 °C
25 °C
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
260
520
780
1040
1300
0 5 10 15 20 25 30
C
rss
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 9.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)