Datasheet

ManualsBrandsVISHAY ManualsFETsSI4812BDY-T1-E3, MOSFET

Vishay Siliconix

Si4812BDY

Document Number: 73038

S-83039-Rev. D, 29-Dec-08

www.vishay.com

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• LITTLE FOOT

Plus Power MOSFET

• 100 % R

Tested

MOSFET PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A)

0.016 at V

= 10 V

9.5

0.021 at V

= 4.5 V

7.7

SCHOTTKY PRODUCT SUMMARY

(V)

Diode Forward Voltage

(A)

30 0.50 V at 1.0 A 1.4

SO-8

T op V i e w

Ordering Information:

Si4812BDY-T1-E3 (Lead (Pb)-free)

Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-channel MOSFET

Schottky Diode

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 10 s.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol

Limit

Unit

10 s Steady State

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky) 30

Gate-Source Voltage (MOSFET)

± 20

Continuous Drain Current (T

= 150 °C) (MOSFET)

a, b

= 25 °C

9.5 7.3

= 70 °C 7.7 5.9

Pulsed Drain Current (MOSFET)

Continuous Source Current (MOSFET Diode Conduction)

a, b

2.1 1.2

Average Forward Current (Schottky)

1.4 0.8

Pulsed Forward Current (Schottky)

Single Pulse Avalanche Current

L = 0.1 mH

Avalanche Energy

1.25 mJ

Maximum Power Dissipation (MOSFET)

a, b

= 25 °C

2.5 1.4

= 70 °C 1.6 0.9

Maximum Power Dissipation (Schottky)

a, b

= 25 °C 2.0 1.2

= 70 °C 1.3 0.8

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Device Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (t ≤ 10 s)

MOSFET

thJA

40 50

°C/W

Schottky 50 60

Maximum Junction-to-Ambient (t = Steady State)

MOSFET 72 90

Schottky 85 100

Maximum Junction-to-Foot (t = Steady State)

MOSFET

thJF

18 23

Schottky 24 30

Summary of content (9 pages)

PAGE 1
Si4812BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage IF (A) 0.50 V at 1.0 A 1.
PAGE 2
Si4812BDY Vishay Siliconix MOSFET AND SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit 3 V ± 100 nA Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET and Schottky) On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea IDSS VDS = 30 V, VGS = 0 V 0.004 0.
PAGE 3
Si4812BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 30 20 TC = 125 °C 10 25 °C 3V - 55 °C 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 3.0 3.5 4.0 Transfer Characteristics 1300 0.030 Ciss 0.025 C - Capacitance (pF) 1040 0.020 VGS = 4.5 V VGS = 10 V 0.015 0.010 780 520 Coss 260 0.005 Crss 0 0.
PAGE 4
Si4812BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 0.05 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.04 ID = 9.5 A 0.03 0.02 0.01 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 1 40 30 V Power (W) I R - Reverse Current (mA) 50 0.01 10 30 20 20 V 10 10 V 0.0001 0.00001 8 On-Resistance vs. Gate-to-Source Voltage 10 0.
PAGE 5
Si4812BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 72 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4.
PAGE 6
Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.
PAGE 7
VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same.
PAGE 8
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 9
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