Datasheet

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Document Number: 72124
S-83039-Rev. H, 29-Dec-08
Vishay Siliconix
Si4800BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
50
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
10
T
J
= 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0246810
I
D
= 9 A
- On-Resistance (Ω)r
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
90
150
30
60
Power (W)
Time (s)
120
11010
-1
10
-2
10
-3
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
100 ms
- Drain Current (A)I
D
0.1
Limited
by R
DS(on)*
T
C
= 25 °C
Single Pulse
1 s
10 s
DC
10 ms
1 ms