Datasheet

Document Number: 72124
S-83039-Rev. H, 29-Dec-08
www.vishay.com
3
Vishay Siliconix
Si4800BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
35
40
012345
V
GS
= 10 thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
4 V
- On-Resistance (Ω)R
DS(on)
0.000
0.008
0.016
0.024
0.032
0.040
0 5 10 15 20 25 30
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
1
2
3
4
5
6
0246810
V
DS
= 15 V
I
D
= 9 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
35
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
T
C
= - 55 °C
125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
200
400
600
800
1000
1200
048121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 9 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)