Datasheet

Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
9
Vishay Siliconix
Si4559ADY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
20
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0246810
I
D
= 3.1 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
0
30
10
20
Power (W)
Time (s)
40
1 6001010
-1
10
-3
50
10010
-2
Safe Operating Area, Junction-to-Case
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
P(t) = 10
DC
I
D(on)
Limited
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
I
DM
Limited
Limited
by R
DS(on)*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
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