Datasheet

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Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Vishay Siliconix
Si4559ADY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
012345678
V
GS
= 10 thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
4 V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0 5 10 15 20 25
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
R
DS(on)
- On-Resistance (Ω)
0
2
4
6
8
10
0 3 6 9 12 15
V
DS
= 30 V
I
D
= 3.1 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
0123456
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
200
400
600
800
1000
0 102030405060
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150 175
V
GS
= 10 V
I
D
= 3.1 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)