Datasheet

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Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Vishay Siliconix
Si4559ADY
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min.
Typ.
a
Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
N-Ch 60
V
V
GS
= 0 V, I
D
= - 250 µA
P-Ch - 60
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
N-Ch 55
mV
I
D
= - 250 µA
P-Ch - 50
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
I
D
= 250 µA
N-Ch - 6
I
D
= - 250 µA
P-Ch 4
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
N-Ch 1 3
V
V
DS
= V
GS
, I
D
= - 250 µA
P-Ch - 1 - 3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
N-Ch 100
nA
P-Ch - 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
N-Ch 1
µA
V
DS
= - 60 V, V
GS
= 0 V
P-Ch - 1
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
N-Ch 10
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 55 °C
P-Ch - 10
On-State Drain Current
b
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
N-Ch 20
A
V
DS
≤ - 5 V, V
GS
= - 10 V
P-Ch - 25
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 4.3 A
N-Ch 0.046 0.058
Ω
V
GS
= - 10 V, I
D
= - 3.1 A
P-Ch 0.1 0.120
V
GS
= 4.5 V, I
D
= 3.9 A
N-Ch 0.059 0.072
V
GS
= - 4.5 V, I
D
= - 0.2 A
P-Ch 0.126 0.150
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 4.3 A
N-Ch 15
S
V
DS
= - 15 V, I
D
= - 3.1 A
P-Ch 8.5
Dynamic
a
Input Capacitance
C
iss
N-Channel
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
P-Channel
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
N-Ch 665
pF
P-Ch 650
Output Capacitance
C
oss
N-Ch 75
P-Ch 95
Reverse Transfer Capacitance
C
rss
N-Ch 40
P-Ch 60
Total Gate Charge
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 4.3 A
N-Ch 13 20
nC
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 3.1 A
P-Ch 14.5 22
N-Channel
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 4.3 A
P-Channel
V
DS
= - 30 V, V
GS
= - 4.5 V, I
D
= - 3.1 A
N-Ch 6 9
P-Ch 8 12
Gate-Source Charge
Q
gs
N-Ch 2.3
P-Ch 2.2
Gate-Drain Charge
Q
gd
N-Ch 2.6
P-Ch 3.7
Gate Resistance
R
g
f = 1 MHz
N-Ch 2 3
Ω
P-Ch 14 20