Datasheet

ManualsBrandsVISHAY ManualsFETsSI4559ADY-T1-GE3, MOSFET

Vishay Siliconix

Si4559ADY

Document Number: 73624

S09-0393-Rev. B, 09-Mar-09

www.vishay.com

N- and P-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

Power MOSFET

• 100 % R

and UIS Tested

APPLICATIONS

• CCFL Inverter

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)

(A)

(Typ.)

N-Channel 60

0.058 at V

= 10 V

5.3

6 nC

0.072 at V

= 4.5 V

4.7

P-Channel - 60

0.120 at V

= - 10 V

- 3.9

8 nC

0.150 at V

= - 4.5 V

- 3.5

SO-8

Top View

Ordering Information: Si4559ADY-T1-E3 (Lead (Pb)-free)

Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

P-Channel MOSFET

Notes:

a. Based on T

= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage

60 - 60

Gate-Source Voltage

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

5.3 - 3.9

= 70 °C

4.3 - 3.2

= 25 °C

4.3

b, c

- 3.0

b, c

= 70 °C

3.4

b, c

- 2.4

b, c

Pulsed Drain Current (10 µs Pulse Width)

20 - 25

Source Drain Current Diode Current

= 25 °C

2.6 - 2.8

= 25 °C

1.7

b, c

- 1.7

b, c

Pulsed Source-Drain Current

20 - 25

Single Pulse Avalanche Current

L = 0.1 mH

11 15

Single Pulse Avalanche Energy

6.1 11 mJ

Maximum Power Dissipation

= 25 °C

3.1 3.4

= 70 °C

22.2

= 25 °C

b, c

= 70 °C

1.3

b, c

1.3

b, c

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol

N-Channel P-Channel

Unit

Typ. Max. Typ. Max.

Maximum Junction-to-Ambient

b, d

t ≤ 10 s

thJA

55 62.5 53 62.5

°C/W

Maximum Junction-to-Foot (Drain) Steady State

thJF

33 40 30 37

Summary of content (15 pages)

PAGE 1
Si4559ADY Vishay Siliconix N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.
PAGE 2
Si4559ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max.
PAGE 3
Si4559ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time P-Channel VDD = - 30 V, RL = 12.5 Ω ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω N-Channel VDD = 30 V, RL = 8.8 Ω ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω tf P-Channel VDD = - 30 V, RL = 12.5 Ω ID ≅ - 2.
PAGE 4
Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 18 14 12 10 8 6 4 4 3 2 TC = 125 °C 1 25 °C 3V 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 55 °C 0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 3.5 1000 0.
PAGE 5
Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted R DS(on) - Drain-to-Source On-Resistance (mΩ) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.0 0.2 0.4 0.6 1.0 0.8 1.2 0.12 0.11 0.10 0.09 0.08 0.07 ID = 4.3 A 0.06 0.05 0.04 0 1.4 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 25 2.8 2.
PAGE 6
Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 6 3.5 5 Power Dissipation (W) ID - Drain Current (A) 3.0 4 3 2 2.5 2.0 1.5 1.0 1 0.5 0.0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating Current Derating* IC - Peak Avalanche Current (A) 100 10 TA = 1 0.000001 L . ID BV - VDD 0.00001 0.0001 0.
PAGE 7
Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.
PAGE 8
Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 VGS = 10 thru 5 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 4V 10 15 10 TC = 125 °C 5 5 3V 25 °C - 55 °C 0 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 50 60 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.40 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.35 0.30 0.25 0.20 VGS = 4.
PAGE 9
Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.40 20 0.35 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.0 0.30 0.25 ID = 3.1 A 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 8 10 On-Resistance vs. Gate-to-Source Voltage 0.6 50 0.4 40 ID = 250 µA Power (W) V GS(th) Variance (V) Source-Drain Diode Forward Voltage 0.2 0.0 - 0.2 - 0.
PAGE 10
Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.5 ID - Drain Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.5 100 IC - Peak Avalanche Current (A) 4.0 Power Dissipation (W) 3.5 3.0 2.5 2.0 1.5 1.0 10 TA = L . ID BV - VDD 0.5 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 1 0.000001 0.00001 0.0001 0.
PAGE 11
Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.
PAGE 12
Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.
PAGE 13
VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same.
PAGE 14
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 15
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