Datasheet

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Document Number: 71133
S11-1908-Rev. D, 26-Sep-11
Vishay Siliconix
Si4532ADY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
10
0246810
V
DS
= 10 V
I
D
= 3.9 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0 0.3 0.6 0.9 1.2 1.5
T
J
= 25 °C
30
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 3.9 A
T
J
- Junction Temperature (°C)
(Normalized)- On-ResistanceR
DS(on)
0.00
0.08
0.16
0.24
0.32
0.40
0246810
I
D
= 3.9 A
- On-Resistance ()R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
18
30
6
12
Power (W)
Time (s)
24
1 1001010
-1
10
-2