Datasheet

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Document Number: 71133
S11-1908-Rev. D, 26-Sep-11
Vishay Siliconix
Si4532ADY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
J
= 150 °C
20
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
10
T
J
= 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.03
0.06
0.09
0.12
0.15
0246810
I
D
= 4.9 A
-R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
18
30
6
12
Power (W)
Time (s)
24
1 100 6001010
-1
10
-2
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM