Datasheet
Document Number: 71133
S11-1908-Rev. D, 26-Sep-11
www.vishay.com
3
Vishay Siliconix
Si4532ADY
This document is subject to change without notice.
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GS
= 10 V thru 5 V
4 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
- On-Resistance ()R
DS(on)
0.00
0.03
0.06
0.09
0.12
0.15
048121620
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
02468
V
DS
= 10 V
I
D
= 4.9 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
012345
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
100
200
300
400
500
600
0 6 12 18 24 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 4.9 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)