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Vishay Siliconix

Si4532ADY

Document Number: 71133

S11-1908-Rev. D, 26-Sep-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N- and P-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

Power MOSFETs

• 100 % R

Teste d

• Compliant to RoHS Directive 2002/95/EC

Note:

a. Surface mounted on 1" x 1" FR4 board.

PRODUCT SUMMARY

(V) R

DS(on)

()I

(A)

N-Channel 30

0.053 at V

= 10 V

4.9

0.075 at V

= 4.5 V

4.1

P-Channel - 30

0.080 at V

= - 10 V

- 3.9

0.135 at V

= - 4.5 V

- 3.0

SO-8

Top View

Ordering Information:

Si4532ADY-T1-E3 (Lead (Pb-free)

Si4532ADY-T1-GE3 (Lead (Pb-free and Halogen-free)

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

Parameter Symbol

N-Channel P-Channel

Unit

10 s Steady State 10 s Steady State

Drain-Source Voltage

30 - 30

Gate-Source Voltage

± 20 ± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

4.9 3.7 - 3.9 - 3.0

= 70 °C

3.9 2.9 - 3.1 - 2.4

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.7 0.94 - 1.7 - 1.0

Maximum Power Dissipation

= 25 °C

21.132 1.2

= 70 °C

1.3 0.73 1.3 0.76

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol

N-Channel P-Channel

Unit

Typ. Max. Typ. Max.

Maximum Junction-to-Ambient

t  10 s

thJA

55 62.5 54 62.5

°C/W

Steady State 90 110 87 105

Maximum Junction-to-Foot (Drain) Steady State

thJF

40 50 34 45

Summary of content (11 pages)

PAGE 1
Si4532ADY Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A) 0.053 at VGS = 10 V 4.9 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.
PAGE 2
Si4532ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max.
PAGE 3
Si4532ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 20 VGS = 10 V thru 5 V 16 4V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 12 8 TC = 125 °C 4 3V 25 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 600 0.15 500 0.12 Ciss C - Capacitance (pF) R DS(on) - On-Resistance () - 55 °C 0.09 VGS = 4.
PAGE 4
Si4532ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.15 0.12 10 ID = 4.9 A 0.09 TJ = 150 °C R DS(on) - I S - Source Current (A) 20 TJ = 25 °C 0.06 0.03 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 1.4 Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 0.4 30 0.2 0.0 Power (W) V GS(th) Variance (V) 24 ID = 250 µA - 0.2 18 12 - 0.4 6 - 0.
PAGE 5
Si4532ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.
PAGE 6
Si4532ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.8 VDS = 10 V ID = 3.9 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 2 4 6 8 Qg - Total Gate Charge (nC) 1.4 1.2 1.0 0.8 0.6 - 50 0 0 VGS = 10 V ID = 3.9 A 1.6 10 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 0.
PAGE 7
Si4532ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 87 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4.
PAGE 8
Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.
PAGE 9
VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same.
PAGE 10
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 11
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