Datasheet

Document Number: 72051
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
3
Vishay Siliconix
Si4464DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
8
- On-Resistance (Ω)R
DS(on)
0.0
0.1
0.2
0.3
0.4
0246
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 10 V
2
0
2
4
6
8
10
03691
V
DS
= 100 V
I
D
= 2.2 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0
T
J
= 150 °C
T
J
= 25 °C
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
0 20406080
V
DS
- Drain-to-Source V oltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 2.2 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.0
0.1
0.2
0.3
0.4
0.5
0246810
I
D
= 2.2 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)