Datasheet

Vishay Siliconix
Si4464DY
Document Number: 72051
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
1
N-Channel 200-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• PWM Optimized for Low Q
g
and Low R
g
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
200
0.240 at V
GS
= 10 V
2.2
0.260 at V
GS
= 6.0 V
2.1
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4464DY-T1-E3 (Lead (Pb)-free)
Si4464DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SD
SD
SD
GD
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
200
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
2.2 1.7
A
T
A
= 70 °C
1.7 1.3
Pulsed Drain Current
I
DM
8
Single Avalanch Current
L = 0.1 mH
I
AS
3
Single Avalanch Energy
E
AS
0.45 mJ
Continuous Source Current (Diode Conduction)
a
I
S
2.1 1.2 A
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.5 1.5
W
T
A
= 70 °C
1.6 0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
37 50
°C/W
Steady State 68 85
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
17 21