Datasheet

Document Number: 68841
S09-0863-Rev. C, 18-May-09
www.vishay.com
3
Vishay Siliconix
Si4435DDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0
V
GS
=10V thru 5 V
V
GS
=3V
V
GS
=4V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
0.01
0.02
0.03
0.04
0.05
0 1020304050
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0918 27 36
V
DS
=22.5V
I
D
=9.1A
V
DS
=15V
V
DS
=7.5V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
600
1200
1800
2400
0 6 12 18 24 30
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
=10V
V
GS
=4.5V
I
D
=9.1A
T
J
-Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)