Datasheet

Vishay Siliconix
Si4435DDY
New Product
Document Number: 68841
S09-0863-Rev. C, 18-May-09
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches
• Battery Switch
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
C
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
d
Q
g
(Typ.)
- 30
0.024 at V
GS
= - 10 V - 11.4
15 nC
0.035 at V
GS
= - 4.5 V - 9.4
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 11.4
A
T
C
= 70 °C
- 9.1
T
A
= 25 °C
- 8.1
a, b
T
A
= 70 °C
- 6.5
a, b
Pulsed Drain Current
I
DM
- 50
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
- 4.1
T
A
= 25 °C
- 2.0
a, b
Avalanche Current
L = 0.1 mH
I
AS
- 20
Single-Pulse Avalanche Energy
E
AS
20 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
5.0
W
T
C
= 70 °C 3.2
T
A
= 25 °C
2.5
a, b
T
A
= 70 °C
1.6
a, b
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t ≤ 10 s
R
thJA
38 50
°C/W
Maximum Junction-to-Foot
Steady State
R
thJF
20 25
S
S
D
D
D
S
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4435DDY-T1-E3 (Lead (Pb)-free)
Si4435DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-
C
h
a
nn
e
l M
OS
FET