Datasheet

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Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
Vishay Siliconix
Si4431BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 2 5 5 0 7 5 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- T emperature (°C)
Single Pulse Power
0
50
10
Power (W)
Time (s)
20
1 100 6001010
-1
10
-2
10
-3
30
40
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
P(t) = 10
DC
0.1
I
DM
Limited
I
D(on)
Limited
DS(on)*
Limited by R
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 1 0 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 70 °C/W
3. T
JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM