Datasheet

Document Number: 72000
S09-0767-Rev. E, 04-May-09
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3
Vishay Siliconix
Si4425BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.000
0.005
0.010
0.015
0.020
0.025
0 1020304050
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
0 1020304050607080
V
DS
= 15 V
I
D
= 12 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
50
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
1000
2000
3000
4000
5000
0 6 12 18 24 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
R
DS(on)
- On-Resistance
(Normalized)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 12 A
T
J
- Junction Temperature (°C)
0.00
0.01
0.02
0.03
0.04
0.05
0246810
I
D
= 12 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)