Datasheet

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Vishay Siliconix

Si4425BDY

Document Number: 72000

S09-0767-Rev. E, 04-May-09

www.vishay.com

P-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Power MOSFET

• Advanced High Cell Density Process

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switches

- Notebook PCs

- Desktop PCs

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A)

- 30

0.012 at V

= - 10 V

- 11.4

0.019 at V

= - 4.5 V

- 9.1

SO-8

Top View

Ordering Information: Si4425BDY-T1-E3 (Lead (Pb)-free)

Si4425BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

- 30

Gate-Source Voltage

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

- 11.4 - 8.8

= 70 °C

- 9.1 - 7.0

Pulsed Drain Current

- 50

Continuous Source Current (Diode Conduction)

- 2.1 - 1.3

Maximum Power Dissipation

= 25 °C

2.5 1.5

= 70 °C

1.6 0.9

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

t ≤ 10 s

thJA

40 50

°C/W

Steady State 70 85

Maximum Junction-to-Foot (Drain) Steady State

thJF

15 18

Summary of content (9 pages)

PAGE 1
Si4425BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.
PAGE 2
Si4425BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 1.0 Typ. Max.
PAGE 3
Si4425BDY Vishay Siliconix 0.025 5000 0.020 4000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 Ciss 3000 2000 Coss 1000 Crss 0.000 0 0 10 20 30 40 50 0 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.6 VGS = 10 V ID = 12 A VDS = 15 V ID = 12 A 1.4 R DS(on) - On-Resistance (Normalized) 8 6 4 1.2 1.0 0.8 2 0.
PAGE 4
Si4425BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 30 0.6 25 20 0.4 Power (W) VGS(th) Variance (V) ID = 250 µA 0.2 15 0.0 10 - 0.2 5 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10-2 150 10 -1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM Limited P(t) = 0.0001 ID - Drain Current (A) 10 1 P(t) = 0.001 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.
PAGE 5
Si4425BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations.
PAGE 6
Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.
PAGE 7
VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same.
PAGE 8
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 9
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