Datasheet

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Document Number: 73067
S09-0322-Rev. C, 02-Mar-09
Vishay Siliconix
Si4420BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power
0
30
50
10
20
Power (W)
Time (s)
40
1 100 6001010
-1
10
-2
T
A
= 25 °C
Safe Operating Area, Junction-to-Case
100
1
0.1 1 10 100
0.01
10
1 s
0.1
T
A
= 25 °C
Single Pulse
10 ms
100 ms
100 s, DC
10 s
1 ms
100 µs, 10 µs
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)
*
I
D
- Drain Current (A)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM