Datasheet

Document Number: 73067
S09-0322-Rev. C, 02-Mar-09
www.vishay.com
3
Vishay Siliconix
Si4420BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.004
0.008
0.012
0.016
0.020
0 1020304050
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (Ω)
0
2
4
6
8
10
0 5 10 15 20 25 30
V
DS
= 15 V
I
D
= 13.5 A
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
1.0 1.2
1
10
50
0.00 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 13.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.01
0.02
0.03
0.04
0.05
0246810
I
D
= 13.5 A
RDS(on) - On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)