Datasheet

Document Number: 72211
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
3
Vishay Siliconix
Si4410BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0 1020304050
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 4.5 V
0
2
4
6
8
10
0 5 10 15 20 25
V
DS
= 15 V
I
D
= 10 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
1.0 1.2
1
10
50
0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
400
800
1200
1600
2000
0 6 12 18 24 30
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
iss
0.0
0.4
0.8
1.2
1.6
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 10 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.02
0.04
0.06
0.08
0.10
0246810
I
D
= 10 A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)