Datasheet

ManualsBrandsVISHAY ManualsFETsSI4410BDY-T1-E3, MOSFET

Vishay Siliconix

Si4410BDY

Document Number: 72211

S09-0705-Rev. D, 27-Apr-09

www.vishay.com

N-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Power MOSFET

• 100 % R

Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Battery Switch

• Load Switch

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A)

0.0135 at V

= 10 V

0.020 at V

= 4.5 V

SO-8

Top View

Ordering Information: Si4410BDY-T1-E3 (Lead (Pb)-free)

Si4410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

10 7.5

= 70 °C

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source Current (Diode Conduction)

2.3 1.26

Maximum Power Dissipation

= 25 °C

2.5 1.4

= 70 °C

1.6 0.9

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

t ≤ 10 s

thJA

40 50

°C/W

Steady State 70 90

Maximum Junction-to-Foot (Drain) Steady State

thJF

25 30

Summary of content (9 pages)

PAGE 1
Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.
PAGE 2
Si4410BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 3.
PAGE 3
Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 2000 Ciss 1600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 1200 800 Coss 400 0.005 Crss 0.000 0 0 10 20 30 40 50 0 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 2.0 VDS = 15 V ID = 10 A 8 VGS = 10 V ID = 10 A 6 4 (Normalized) 1.
PAGE 4
Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 50 0.4 ID = 250 µA 40 0.0 Power (W) VGS(th) Variance (V) 0.2 - 0.2 - 0.4 30 TA = 25 °C 20 - 0.6 10 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 10-2 10-1 1 TJ - Temperature (°C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 100 µs, 10 µs I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 10 ms 1 100 ms 0.1 0.01 0.
PAGE 5
Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations.
PAGE 6
Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.
PAGE 7
VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same.
PAGE 8
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 9
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