Datasheet

Document Number: 70687
S09-0221-Rev. C, 09-Feb-09
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3
Vishay Siliconix
Si4408DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.002
0.004
0.006
0.008
0.010
0 102030405060
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
1
2
3
4
5
6
0 6 12 18 24 30
V
DS
= 10 V
I
D
= 21 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
1.0 1.2
1
10
60
0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
900
1800
2700
3600
4500
048121620
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 21 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance R
DS(on)
0.000
0.004
0.008
0.012
0.016
0.020
0246810
I
D
= 21 A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)