Datasheet

Vishay Siliconix
Si4408DY
Document Number: 70687
S09-0221-Rev. C, 09-Feb-09
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• PWM Optimized for Fast Switching
• Low Switching Losses
• Low Gate Drive Losses
• 100 % R
g
Tested
APPLICATIONS
• Self-Driven Synchronous Rectification
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
20
0.0045 at V
GS
= 10 V
21
0.0068 at V
GS
= 4.5 V
17
S
S
D
D
D
S
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4408DY-T1-E3 (Lead (Pb)-free)
Si4408DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
21 14
A
T
A
= 70 °C
17 11
Pulsed Drain Current (10 µs Pulse Width)
I
DM
60
Continuous Source Current (Diode Conduction)
a
I
S
2.9 1.3
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.5 1.6
W
T
A
= 70 °C
2.2 1
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
29 35
°C/W
Steady State 67 80
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
13 16