Datasheet

Document Number: 67907
S11-0653-Rev. A, 11-Apr-11
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3
Vishay Siliconix
Si4214DDY-T1-E3
This document is subject to change without notice.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
8
16
24
32
40
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
=10V thru 4 V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.010
0.014
0.018
0.022
0.026
0.030
0 1020304050
V
GS
=4.5V
V
GS
=10V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0.0 3.2 6.4 9.6 12.8 16
V
DS
=20V
V
DS
=10V
I
D
= 8 A
V
DS
=15V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
012345
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
200
400
600
800
1000
061218 24 30
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 8 A
V
GS
=4.5V
V
GS
=10V
T
J
-Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)