Datasheet

Vishay Siliconix
Si4214DDY-T1-E3
Document Number: 67907
S11-0653-Rev. A, 11-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET

Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a
Q
g
(Typ.)
30
0.0195 at V
GS
= 10 V
8.5
7.1
0.023 at V
GS
= 4.5 V
8.6
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4214DDY-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
2
D
2
S
2
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
8.5
A
T
C
= 70 °C
7.5
T
A
= 25 °C
7.5
b, c
T
A
= 70 °C
5.9
b, c
Pulsed Drain Current I
DM
30
Source-Drain Current Diode Current
T
C
= 25 °C
I
S
2.8
T
A
= 25 °C
1.8
b, c
Pulsed Source-Drain Current I
SM
30
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
10
Single Pulse Avalanche Energy E
AS
5
Maximum Power Dissipation
T
C
= 25 °C
P
D
3.1
W
T
C
= 70 °C
2.0
T
A
= 25 °C
2.0
b, c
T
A
= 70 °C
1.25
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ. Max. Unit
Maximum Junction-to-Ambient
b, d
t  10 s
R
thJA
52 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady-State
R
thJF
30 40