Datasheet

Vishay Siliconix
Si4162DY
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
APPLICATIONS
• DC/DC
- High Side
- VRM
- POL
- Server
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
Q
g
(Typ.)
30
0.0079 at V
GS
= 10 V
19.3
a
8.8 nC
0.010 at V
GS
= 4.5 V
17.1
a
Ordering Information: Si4162DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
N-
C
hannel M
OS
FET
G
D
S
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
19.3
a
A
T
C
= 70 °C
15.4
T
A
= 25 °C
13.6
b, c
T
A
= 70 °C
10.9
b, c
Pulsed Drain Current I
DM
70
Avalanche Current
L = 0.1 mH
I
AS
31
Avalanche Energy E
AS
48
mJ
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
4.2
a
A
T
A
= 25 °C
2.1
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
5
W
T
C
= 70 °C
3.2
T
A
= 25 °C
2.5
b, c
T
A
= 70 °C
1.6
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature) 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
t ≤ 10 s
R
thJA
38 50
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
20 25
RoHS
COMPLIANT