Datasheet

www.vishay.com
4
Document Number: 68999
S11-0650-Rev. C, 11-Apr-11
Vishay Siliconix
Si4134DY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 0.8
- 0.6
- 0.4
- 0.2
0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0.06
012345678 910
T
J
=25 °C
T
J
= 125 °C
I
D
=10A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
16
32
48
64
80
011100.00.010.1
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
1s
10 s
Limited byR
DS(on)
*
BVDSS Limited
1ms
10 ms
100 ms
DC