Datasheet

Vishay Siliconix
Si4134DY
Document Number: 68999
S11-0650-Rev. C, 11-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Conversion
- Notebook System Power
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A)
a
Q
g
(Typ.)
30
0.014 at V
GS
= 10 V 14
7.3 nC
0.0175 at V
GS
= 4.5 V 12.5
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4134DY-T1-E3 (Lead (Pb)-free)
Si4134DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
14
A
T
C
= 70 °C
11.2
T
A
= 25 °C 9.9
b, c
T
A
= 70 °C 7.9
b, c
Pulsed Drain Current
I
DM
32
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
4.1
T
A
= 25 °C 2.0
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
15
Avalanche Energy
E
AS
11.25
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
5
W
T
C
= 70 °C
3.2
T
A
= 25 °C 2.5
b, c
T
A
= 70 °C 1.6
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
t  10 s R
thJA
38 50
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
20 25