Datasheet

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Document Number: 69004
S-83089-Rev. C, 29-Dec-08
Vishay Siliconix
Si4128DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0
0.02
0.04
0.06
0.08
02468 10
T
J
= 25 °C
T
J
= 125 °C
I
D
=7.8 A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
100 µs
1s
10 s
Limited byR
DS(on)
*
BVDSS Limited
1ms
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D