Datasheet

Vishay Siliconix
Si4128DY
New Product
Document Number: 69004
S-83089-Rev. C, 29-Dec-08
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
APPLICATIONS
•
Notebook PC
- System Power
- Load Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
30
0.024 at V
GS
= 10 V
10.9
3.8 nC
0.030 at V
GS
= 4.5 V
9.7
N-Channel MOSFET
G
D
S
D
S
D
D
G
D
SO
-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4128DY-T1-E3 (Lead (Pb)-free)
Si4128DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
S
Notes:
a. T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
10.9
A
T
C
= 70 °C
8.7
T
A
= 25 °C
7.5
b, c
T
A
= 70 °C
6
b, c
Pulsed Drain Current
I
DM
30
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
4.2
T
A
= 25 °C
2
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
5
W
T
C
= 70 °C
3.2
T
A
= 25 °C
2.4
b, c
T
A
= 70 °C
1.5
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
t ≤ 10 s
R
thJA
42 53
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
19 25