Datasheet

Document Number: 69837
S-83046-Rev. C, 22-Dec-08
www.vishay.com
3
Vishay Siliconix
Si4116DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=10thru 3 V
V
GS
=2V
0.0070
0.0073
0.0076
0.0079
0.0082
0.0085
0 1020304050
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=10V
V
GS
=4.5V
0
2
4
6
8
10
0 8 16 24 32 40
I
D
=10A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=20V
V
DS
=10V
V
DS
=15V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.6 1.2 1.8 2.4 3.0
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
C
rss
0
500
1000
1500
2000
2500
0 5 10 15 20 25
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
I
D
=10A
V
GS
=10V
V
GS
=4.5V