Datasheet
Vishay Siliconix
Si4102DY
www.vishay.com
4
Document Number: 69252
S13-0631-Rev. C, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
2.0
2.4
2.8
3.2
3.6
4.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.1
0.2
0.3
0.4
0246810
I
D
= 2.7 A
- On-Resistance ()R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
10
20
30
40
50
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
- Drain Current (A)I
D
1
0.01
00010111.0
0.1
10
T
A
= 25 °C
Single Pulse
10 ms
1 s
DC
100 µs
100
1 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
Limited by R *
DS(on)
BVDSS Limited
10 s
100 ms