Datasheet
Vishay Siliconix
Si4102DY
Document Number: 69252
S13-0631-Rev. C, 25-Mar-13
www.vishay.com
3
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GS
= 10 V thru 6 V
4
V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
5
V
- On-Resistance ()R
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
02468
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 6.0 V
0
2
4
6
8
10
02468
I
D
= 2.7 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 50 V
V
DS
= 80 V
0
2
4
6
8
10
02468
V
DS
= 50 V
V
DS
= 80 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
0123456
T
C
= 125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
- 55 °C
0
100
200
300
400
500
0 102030405060
V
DS
- Drain-to-Source Voltage (V)
rss
C
oss
C
iss
C - Capacitance (pF)
C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 2.7 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance R
DS(on)