Datasheet

Vishay Siliconix
Si4102DY
Document Number: 69252
S13-0631-Rev. C, 25-Mar-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: [e-mail]
N-Channel 100 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
•100 % UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High Frequency Boost Converter
• LED Backlight for LCD TV
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on T
C
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
d
Q
g
(Typ.)
100
0.158 at V
GS
= 10 V
3.8
4.6 nC
0.175 at V
GS
= 6 V
3.6
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
3.8
A
T
C
= 70 °C
3
T
A
= 25 °C
2.7
a, b
T
A
= 70 °C
2.1
a, b
Pulsed Drain Current
I
DM
8
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
4
T
A
= 25 °C
2
a, b
Single Avalanche Current
L = 0.1 mH
I
AS
6
A
Single Avalanche Energy
E
AS
1.8
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
4.8
W
T
C
= 70 °C
3
T
A
= 25 °C
2.4
a, b
T
A
= 70 °C
1.5
a, b
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t  10 s R
thJA
42 53
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
21 26
D
S
D
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4102DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
S
N-Channel MOSFET
G
D
S