Datasheet

Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
www.vishay.com
3
Vishay Siliconix
Si3552DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
10
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V thru 5 V
4 V
3 V
2 V
0.00
0.05
0.10
0.15
0.20
0.25
01234567
R
DS(on)
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
- On-Resistance (Ω)
0
2
4
6
8
10
01234
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 15 V
I
D
= 1.8 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0123456
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
25 °C
T
C
= - 55 °C
125 °C
0
50
100
150
200
250
300
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance R
DS(on)
V
GS
= 10 V
I
D
= 2.5 A