Datasheet

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Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
Vishay Siliconix
Si3460BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
Source Current (A) -
1
100
V
SD
- Source-to-Drain Voltage (V)
I
S
0 0.2
0.4
0.6
0.8 1
10
1.2
T
J
= 150 °C
T
J
= 25 °C
0.2
0.3
0.4
0.5
0.6
0.7
0
.
8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V
GS(th)
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.00
0.02
0.04
0.06
0
.
08
012345
e (Ω)
c
n
a
t
s i s
e
R
-
n O
R
DS(on)
-
V
GS
- Gate-to-Source Voltage (V)
I
D
= 5.1 A
125 °C
0.01
0.03
0.05
0.07
I
D
= 5.1 A
25 °C
0
30
50
10
20
) W ( r e w o P
Time (s)
40
1 100 600 10 10
- 1
10
- 2
10
- 3
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
) A ( t n e
r r u C
n i
a
r D
- I
D
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 s
DC
1 s
100 ms
10 ms
1 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)
*