Datasheet

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Vishay Siliconix

Si3460BDV

Document Number: 74412

S09-1498-Rev. C, 10-Aug-09

www.vishay.com

N-Channel 20-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Applications

• Load Switch for Low Voltage Bus

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)

(A)

(Typ.)

0.027 at V

= 4.5 V

9 nC

0.032 at V

= 2.5 V

0.040 at V

= 1.8 V

Marking Code

AF XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si3460BDV-T1-E3 (Lead (Pb)-free)

Si3460BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

TSOP-6

Top View

3 mm

2.85 mm

(1, 2, 5, 6)

(3)

(4)

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

± 8

Continuous Drain Current (T

= 150 °C)

= 25 °C

= 70 °C 7.1

= 25 °C 6.7

b, c

= 70 °C 5.4

b, c

Pulsed Drain Current I

Continuous Source-Drain Diode Current

= 25 °C

2.9

= 25 °C 1.7

b, c

Maximum Power Dissipation

= 25 °C

3.5

= 70 °C 2.2

= 25 °C 2

b, c

= 70 °C 1.3

b, c

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, d

t ≤ 5 s R

thJA

50 62.5

°C/W

Maximum Junction-to-Foot (Drain) Steady State R

thJF

30 36

Summary of content (11 pages)

PAGE 1
Si3460BDV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.
PAGE 2
Si3460BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 22.5 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.
PAGE 3
Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 20 VGS = 5 V thru 2 V 8 10 ID - Drain Current (A) ID - Drain Current (A) 15 1.5 V 6 4 TC = 125 °C 5 2 - 55 °C 25 °C 1V 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.6 1.2 1.5 1.8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.060 VGS = 1.8 V 0.050 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.9 0.040 VGS = 2.5 V 0.
PAGE 4
Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.08 RDS(on) -On-Resistance (Ω) IS - Source Current (A) 0.07 T J = 150 °C 10 T J = 25 °C ID = 5.1 A 25 °C 0.06 0.05 ID = 5.1 A 125 °C 0.04 0.03 0.02 0.01 1 0.00 0 0.4 0.2 0.6 0.8 1 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.8 50 ID = 250 µA 0.7 40 Power (W) VGS(th) (V) 0.
PAGE 5
Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 10 8 Power Dissipation (W) Drain Current (A) 3 Package Limited 6 4 2 1 2 0 0 0 25 50 75 100 Foot (Drain) Temperature ( C) Current Derating* 125 150 25 50 75 100 125 150 Foot (Drain) Temperature ( C) Power Derating * The power dissipation PD is based on TJ(max.
PAGE 6
Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Duty Cycle = 0.
PAGE 7
Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.
PAGE 8
AN823 Vishay Siliconix Mounting LITTLE FOOTR TSOP-6 Power MOSFETs Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages.
PAGE 9
AN823 Vishay Siliconix 10 s (max) 255 − 260_C 1X4_C/s (max) 3-6_C/s (max) 217_C 140 − 170_C 60 s (max) 60-120 s (min) Pre-Heating Zone 3_C/s (max) Reflow Zone Maximum peak temperature at 240_C is allowed. FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE TABLE 1. Equivalent Steady State Performance—TSOP-6 Thermal Resistance Rqjf 30_C/W On-Resistance vs. Junction Temperature 1.6 VGS = 4.5 V ID = 6.1 A 1.
PAGE 10
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 11
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