Datasheet

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Document Number: 74495
S12-0335-Rev. C, 13-Feb-12
Vishay Siliconix
Si3443CDV
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74495
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 100010
-1
10
-4
100
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 110 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
0.1
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE de
zi
lamroN
ecnadepm
I lam
r
e
hT
0.05
0.02
Single Pulse
10
-3
10
-2
11010
-1
10
-4