Datasheet

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Document Number: 74495
S12-0335-Rev. C, 13-Feb-12
Vishay Siliconix
Si3443CDV
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0
10
0.001
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
T
J
= 25 °C
0.01
0.1
1
0.5
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.03
0.06
0.09
0.12
0.15
012345
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 4.7 A
T
A
= 125 °C
T
A
= 25 °C
0
30
40
10
20
r (W)ewoP
Time (s)
1 10000.1 0.010.001
10 100
50
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
10
0.1 1 10 100
0.01
100
- Drain Current (A)
I
D
1
T
A
= 25 °C
Single Pulse
0.1
10 ms
100 ms
DC
1 s
10 s
0.001
Limited by R
DS(on)*