Datasheet

Document Number: 74495
S12-0335-Rev. C, 13-Feb-12
www.vishay.com
3
Vishay Siliconix
Si3443CDV
This document is subject to change without notice.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
01234
V
GS
= 5 V thru 3.5 V
V
GS
= 1.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 2.0 V
V
GS
= 2.5 V
V
GS
= 3.0 V
0.00
0.05
0.10
0.15
0.20
048 12 16 20
- On-Resistance (Ω)
R
DS(on)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
0
1
2
3
4
5
02468 10
I
D
= 4.7 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 10 V
V
DS
= 16 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.8
1.6
2.4
3.2
4.0
0.0 0.6 1.2 1.8 2.4 3.0
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)
I
D
T
C
= 125 °C
T
C
= - 55 °C
0
300
600
900
1200
04
8 12 16 20
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
R
DS(on)
- On-Resistance (Normalized)
0.6
0.8
1.0
1.2
1.4
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 4.7 A
T
J
- Junction Temperature (°C)
V
GS
= 2.5 V
I
D
= 3.4 A