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Vishay Siliconix

Si3443CDV

Document Number: 74495

S12-0335-Rev. C, 13-Feb-12

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET

Power MOSFET

• PWM Optimized

• 100 % R

Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• HDD

• Asynchronous Rectification

• Load Switch for Portable Devices

Notes:

a. Based on T

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 110 °C/W.

PRODUCT SUMMARY

(V) R

DS(on)

()

(A)

(Typ.)

- 20

0.060 at V

= - 4.5 V

- 4.7

7.53 nC

0.084 at V

= - 2.7 V

- 3.9

0.100 at V

= - 2.5 V

- 3.4

(4) S

(3) G

(1, 2, 5, 6) D

TSOP-6

Top View

Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free)

Si3443CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

3 mm

2.85 mm

Marking Code

AL XXX

Lot Traceability

and Date Code

Part # Code

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

Parameter Symbol Limit

Unit

Drain-Source Voltage V

- 20

Gate-Source Voltage V

± 12

Continuous Drain Current (T

= 150 °C)

= 25 °C

- 5.97

= 70 °C

- 4.6

= 25 °C

- 4.7

b, c

= 70 °C

- 3.4

b, c

Pulsed Drain Current

- 20

Continuous Source-Drain Diode Current

= 25 °C

- 2.67

= 25 °C

- 1.71

b, c

Maximum Power Dissipation

= 25 °C

3.2

= 70 °C

2.05

= 25 °C

b, c

= 70 °C

1.28

b, c

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, d

t  5 s

thJA

51 62.5

°C/W

Maximum Junction-to-Foot (Drain) Steady State

thJF

32 39

Summary of content (11 pages)

PAGE 1
Si3443CDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.060 at VGS = - 4.5 V - 4.7 0.084 at VGS = - 2.7 V - 3.9 0.100 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7.
PAGE 2
Si3443CDV Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V - 18.8 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 1.
PAGE 3
Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 4.0 VGS = 5 V thru 3.5 V VGS = 3.0 V 3.2 I D - Drain Current (A) I D - Drain Current (A) 16 12 VGS = 2.5 V 8 VGS = 2.0 V 4 2.4 1.6 TC = 125 °C 0.8 TC = - 55 °C TC = 25 °C VGS = 1.5 V 0 0 1 2 3 0.0 0.0 4 0.6 1.2 1.8 2.4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 1200 0.15 900 VGS = 2.
PAGE 4
Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.15 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.7 A 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.12 0.09 TA = 125 °C 0.06 0.00 0.001 0.0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 0 1.0 2 3 4 5 On-Resistance vs. Gate-to-Source Voltage 1.5 50 1.3 40 Power (W) V GS(th) (V) 1 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.1 ID = 250 µA 0.9 30 20 10 0.
PAGE 5
Si3443CDV Vishay Siliconix 8 4 6 3 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 2 0 2 1 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Foot 125 150 * The power dissipation PD is based on TJ(max.
PAGE 6
Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4.
PAGE 7
Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.
PAGE 8
AN823 Vishay Siliconix Mounting LITTLE FOOTR TSOP-6 Power MOSFETs Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages.
PAGE 9
AN823 Vishay Siliconix 10 s (max) 255 − 260_C 1X4_C/s (max) 3-6_C/s (max) 217_C 140 − 170_C 60 s (max) 60-120 s (min) Pre-Heating Zone 3_C/s (max) Reflow Zone Maximum peak temperature at 240_C is allowed. FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE TABLE 1. Equivalent Steady State Performance—TSOP-6 Thermal Resistance Rqjf 30_C/W On-Resistance vs. Junction Temperature 1.6 VGS = 4.5 V ID = 6.1 A 1.
PAGE 10
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 11
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