Datasheet

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Document Number: 72504
S09-2110-Rev. E, 12-Oct-09
Vishay Siliconix
Si3442BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72504
.
Threshold Voltage
- 0.6
- 0.5
- 0.4
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power
0
8
2
4
Time (s)
1 60010
6
0.10.01
100
T
A
= 25 °C
Single Pulse
Power (W)
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
0.1
BVDSS Limited
I
DM
Limited
1 ms
10 ms
100 ms
1 s, 10 s
100 s, DC
10 µs
100 µs
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
DS(on)*
Limited by R
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
1 10 60010
-
1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM