Datasheet

Document Number: 72504
S09-2110-Rev. E, 12-Oct-09
www.vishay.com
3
Vishay Siliconix
Si3442BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
048121620
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 2.5 V
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
DS
= 10 V
I
D
= 4 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.001
1
0.1
0.01
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
80
160
240
320
400
480
048121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 4 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.04
0.08
0.12
0.16
0.20
012345678
I
D
= 4 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)