Datasheet

Vishay Siliconix
Si3442BDV
Document Number: 72504
S09-2110-Rev. E, 12-Oct-09
www.vishay.com
1
N-Channel 2.5-V (G-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
20
0.057 at V
GS
= 4.5 V
4.2
0.090 at V
GS
= 2.5 V
3.4
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)
Si3442BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code: 2Bxxx
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
Note:
a. Surface Mounted on FR4 board, t ≤ 5 s.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
4.2 3.0
A
T
A
= 70 °C
3.4 2.4
Pulsed Drain Current
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
1.4 0.72
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.67 0.86
W
T
A
= 70 °C
1.07 0.55
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
75 100
°C/W
Steady State 120 145
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
70 85